| Number of channels: | 4 |
| Rail-to-rail: | No |
| GBW (typ) (MHz): | 4 |
| Slew rate (typ) (V/µs): | 13 |
| Vos (offset voltage at 25°C) (max) (mV): | 5 |
| Iq per channel (typ) (mA): | 1.8 |
| Vn at 1 kHz (typ) (nV√Hz): | 20 |
| Rating: | Military |
| Operating temperature range (°C): | -55 to 125 |
| Offset drift (typ) (µV/°C): | 10 |
| Input bias current (max) (pA): | 200 |
| CMRR (typ) (dB): | 100 |
| Iout (typ) (A): | 0.03 |
| Architecture: | FET |
| Input common mode headroom (to negative supply) (typ) (V): | 3 |
| Input common mode headroom (to positive supply) (typ) (V): | 0 |
| Output swing headroom (to negative supply) (typ) (V): | 1.5 |
| Output swing headroom (to positive supply) (typ) (V): | -1.5 |
| Number of channels: | 4 |
| Rail-to-rail: | No |
| GBW (typ) (MHz): | 4 |
| Slew rate (typ) (V/µs): | 13 |
| Vos (offset voltage at 25°C) (max) (mV): | 5 |
| Iq per channel (typ) (mA): | 1.8 |
| Vn at 1 kHz (typ) (nV√Hz): | 20 |
| Rating: | Military |
| Operating temperature range (°C): | -55 to 125 |
| Offset drift (typ) (µV/°C): | 10 |
| Input bias current (max) (pA): | 200 |
| CMRR (typ) (dB): | 100 |
| Iout (typ) (A): | 0.03 |
| Architecture: | FET |
| Input common mode headroom (to negative supply) (typ) (V): | 3 |
| Input common mode headroom (to positive supply) (typ) (V): | 0 |
| Output swing headroom (to negative supply) (typ) (V): | 1.5 |
| Output swing headroom (to positive supply) (typ) (V): | -1.5 |
